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  • Open Access Icon
  • Research Article
  • Cite Count Icon 28
  • 10.1016/j.spmi.2021.107098
DFT investigation of H2S and SO2 adsorption on Zn modified MoSe2
  • Feb 1, 2022
  • Superlattices and Microstructures
  • Ahmad I Ayesh

Development of decidedly sensitive and selective gas sensors is desirable to maintain control of environment quality against hazardous pollutant. The adsorption of H 2 S and SO 2 molecules on pristine and Zn doped MoSe 2 structures is examined by first principles computations - density functional theory (DFT). The work involves analysis of adsorption energy and distance, charge transferred between a structure and a gas molecule, band structure, and density of states (DOS). The band structure of MoSe 2 reveals substantial variations of its electronic properties upon doping with Zn. Furthermore, new bands have been developed near the Fermi level within the DOS due to Zn doping of MoSe 2 structure. The adsorption of both H 2 S and SO 2 gases on Zn–MoSe 2 structure is greatly enhanced, as compared with the pristine structure. The Zn-modified MoSe 2 structure exhibits larger adsorption energy for H 2 S gas, hence, better sensitivity is comparison with SO 2 gas. This work illustrates that Zn doping of MoSe 2 structure may be considered for sensitive detection of H 2 S gas. • Zn doped MoSe 2 was explored for sensors applications of H 2 S and SO 2 gases using DFT calculation. • The gas adsorption capacity was investigated using: adsorption energy and distance, charge transferred, and DOS. • Excellent improvement was observed for H 2 S and SO 2 adsorption after doping. • Adsorption energy for H 2 S gas of Zn-MoSe 2 structure was 5.5 times more than that of the pristine structure. • Adsorption energy for SO 2 gas of Zn-MoSe 2 structure was 3 times more than that of the pristine structure.

  • Research Article
  • Cite Count Icon 15
  • 10.1016/j.spmi.2021.107097
Enhancement in optoelectronic properties of lanthanum co-doped CdO: Zn thin films for TCO applications
  • Feb 1, 2022
  • Superlattices and Microstructures
  • R Sarath Babu + 7 more

  • Open Access Icon
  • Research Article
  • Cite Count Icon 10
  • 10.1016/j.spmi.2021.107102
Enhanced electronic and optical responses of nitrogen- or boron-doped BeO monolayer: First principle computation
  • Feb 1, 2022
  • Superlattices and Microstructures
  • Nzar Rauf Abdullah + 5 more

  • Research Article
  • Cite Count Icon 11
  • 10.1016/j.spmi.2021.107099
Performance evaluation of gate engineered InAs–Si heterojunction surrounding gate TFET
  • Feb 1, 2022
  • Superlattices and Microstructures
  • M Sathishkumar + 4 more

  • Open Access Icon
  • Research Article
  • 10.1016/s0749-6036(22)00032-5
Editorial Board
  • Feb 1, 2022
  • Superlattices and Microstructures

  • Research Article
  • Cite Count Icon 5
  • 10.1016/j.spmi.2021.107110
Compact analytical modeling of underlap gate stack graded channel junction accumulation mode junctionless FET in subthreshold regime
  • Feb 1, 2022
  • Superlattices and Microstructures
  • Ankush Chattopadhyay + 2 more

  • Research Article
  • Cite Count Icon 5
  • 10.1016/j.spmi.2021.107109
Switchable absorbing, reflecting, and transmitting metasurface by employing vanadium dioxide on the same frequency
  • Feb 1, 2022
  • Superlattices and Microstructures
  • Yunpeng Liu + 5 more

  • Open Access Icon
  • Research Article
  • Cite Count Icon 27
  • 10.1016/j.spmi.2021.107132
First-principles calculations to investigate electronic structure and optical properties of 2D MgCl2 monolayer
  • Feb 1, 2022
  • Superlattices and Microstructures
  • H.r Mahida + 5 more

  • Research Article
  • Cite Count Icon 45
  • 10.1016/j.spmi.2021.107101
Comprehensive review on electrical noise analysis of TFET structures
  • Jan 1, 2022
  • Superlattices and Microstructures
  • Sweta Chander + 2 more

  • Research Article
  • Cite Count Icon 17
  • 10.1016/j.spmi.2021.107064
Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
  • Jan 1, 2022
  • Superlattices and Microstructures
  • Jialin Li + 7 more