ABSTRACT This paper presents a low‐voltage, low‐power second‐generation voltage conveyor (VCII) that achieves enhanced bandwidth and reduced power consumption. The proposed VCII employs dynamic threshold MOS (DTMOS) technique to operate under reduced supply voltages, while resistive compensation is incorporated to extend the bandwidth. Two novel memristor emulator designs are introduced based on the proposed VCII. The grounded memristor emulator utilizes a single VCII, a resistor, a capacitor, and an NMOS transistor, whereas the floating emulator configuration employs two VCIIs, a resistor, and an NMOS transistor. The proposed VCII achieves a bandwidth of 325 MHz, an output impedance of 38 Ω at terminal Z , and a power consumption of 0.068 mW. Simulation results further demonstrate that the proposed grounded and floating memristor circuits exhibit distinct pinch hysteresis loops (PHL) in the voltage–current plane up to a frequency of 80 MHz and 1.5 GHz and power consumption of 0.12 and 0.25 mW, respectively. The designs have been validated using 180 nm CMOS technology parameters, operating at a low DC supply voltage of ±0.45 V. Both proposed memristor designs show robust and satisfactory performance across a wide frequency range. The layout and postlayout simulation results of the proposed VCII and both memristor emulators have also been carried out, occupying areas of 2116.13, 2205.02, and 4759.53 μm 2 , respectively. In addition, the process corner simulation of the proposed memristor is also included. The practical relevance of the memristor is demonstrated through the successful realization of low‐pass, high‐pass, and band‐pass filter circuits, highlighting their suitability for next‐generation memristive computing.

ABSTRACT This study investigates interfacial heat transfer and phonon scattering effects in AlGaN/GaN heterostructures using a modified ballistic diffusive equation (BDE) that incorporates a radiative transfer formulation for quasi‐ballistic heat flux and integrates multiple phonon scattering models (Callaway, Born–Von Karman, Holland). Finite element simulations reveal that Umklapp scattering markedly reduces the effective thermal conductivity as both temperature increases and layer thickness decreases. A comparative analysis between Al 0.17 Ga 0.83 N and Al 0.32 Ga 0.68 N layers highlights distinct thermal conductivity trends, primarily due to enhanced boundary scattering in the higher aluminum‐content layer. The temperature distribution exhibits a pronounced peak within the GaN channel, followed by a rapid decline across the Al 0.32 Ga 0.68 N barrier, emphasizing the localized nature of heat generation. Overall, the results demonstrate that phonon scattering mechanisms and material composition have a decisive role in controlling phonon transport at nanoscale interfaces, providing essential insights to improve thermal reliability of GaN HEMT devices.

ABSTRACT Analytical models of base transit time for SiGe‐HBTs usually neglected carrier recombination in the base under the assumption of very thin base. The validity of this assumption is questionable under intermediate injection level (IIL) condition, which is common for highly‐scaled devices operating in the high‐current regime. However, consideration of recombination in the base along with various nonideal physical models reported in the literature under IIL condition leads to the analytical intractability of the governing differential equation (GDE). Therefore, this work intends to develop an analytically tractable ‐ model of SiGe‐HBTs applicable under IIL conditions. The model also considers the effects of base width modulation (BWM) on to simulate the effects of the base pushout phenomena usually occurred at high‐current regime. Close match of the simulated model data and experimentally measured data for the collector current density, total transit time, unity gain‐bandwidth cutoff frequency and maximum frequency of oscillation validates the model quite well. It is noteworthy that significant deviation from the measured data has been observed for the model that does not consider recombination at high‐current regime. Therefore, the proposed model not only provides the justification of the consideration of the effects of carrier recombination in the base to develop analytical model but also shows the practical significance of the developed model to guide the device engineers to design modern highly‐scaled SiGe‐based HBT devices operating in the high current regime, thereby meeting the requirement of sustainable industrialization to facilitate sustainable development goal 9 (SDG 9).

ABSTRACT Reconfigurable reflectarray antenna (RRA) has been considered a potential technology for future communication. However, few studies focus on investigating the intermodulation distortion induced by its active devices, which are employed to provide different compensation phases for the RRA elements. In this paper, the radiation pattern prediction for third‐order intermodulation (IM3) distortion of the RRA with embedded varactor diodes is first proposed. It is implemented with a nonlinear model of the varactor and full‐wave electromagnetism (FEM) simulation. The presented varactor model is first employed to design the RRA and then to acquire the power and phase of the IM3 signal in each element of the RRA, which is realized with a nonlinear harmonic‐balance and FEM co‐simulation. With the help of the HFSS software, the radiation pattern is achieved when the co‐simulation results of the RRA elements are input. The IM3 radiation measurement of the RRA is presented to verify the radiation pattern prediction of the IM3 signal. The consistent comparison results between the simulation and the measurement indicate that the proposed method is accurate. Significantly, the radiation pattern of the IM3 signal is different from that of the fundamental signal based on the designed RRA. It is meaningful and implies that it may have linearization approaches for the RRA. The proposed method will enhance the application of the RRA since the linearization approach is still a scientific challenge in future wireless networks.

ABSTRACT The domestic induction heating system comprises a heating coil and electromagnetic media (ferromagnetic cookware and a magnetic shielding layer). Horizontal or vertical misalignments between the heating coil and cookware during operation inevitably alter the coil's equivalent self‐inductance. This variation in self‐inductance affects impedance matching and complicates power regulation. Currently, calculations of this parameter rely mainly on finite element analysis (FEA) methods. However, FEA methods require significant computational time and may encounter convergence issues due to poor mesh quality, especially when simulating thin layers with large aspect ratios, where stringent meshing requirements often lead to non‐convergence near the surface. This work develops an extended analytical model that incorporates the finite size of the magnetic shielding layer and the finite conductivity of cookware materials (aluminum, 304 stainless steel, and 430 stainless steel). The proposed model accounts for variations in coil dimensions, the relative permeability of the magnetic shielding layer, and the conductivity of cookware materials. It achieves a computational speed five times faster than FEA simulations while maintaining an error of less than 5% compared to experimental results.

ABSTRACT This paper presents a comprehensive numerical analysis of a counterpoise grounding wire subjected to low‐frequency surge currents, employing the Interpolating Element‐Free Galerkin Method (IEFGM). The analysis involves significant challenges arising from the high ratio between the conductor length and its radius—which demands fine spatial resolution—and from the asymmetric current injection, which requires a three‐dimensional representation over an extensive computational domain. To address these issues, the domain is reduced through the application of artificial boundary conditions with prescribed electric potentials, alongside an optimized distribution of nodes and Gauss integration points. Furthermore, a tailored mathematical formulation is proposed to incorporate the surge current directly into the model, enhancing the physical fidelity of the simulation. The IEFGM proves well suited for this task, offering numerical stability, consistent convergence behavior, and the flexibility to handle complex three‐dimensional geometries. Validation is carried out by comparing the computed grounding resistance with analytical approach, and a detailed convergence study investigates the influence of domain size, nodal spacing, and integration parameters. The results confirm the robustness and accuracy of the proposed methodology.

ABSTRACT The ionic flow in biological neurons and electron flow in MOSFETs both exhibit nonlinear behavior, enabling transistors to mimic neuronal spiking. The transistor and capacitor networks form conductive channels analogous to ion channels , , , and , generating membrane‐like voltages and action potentials. The paper introduces mathematical modeling of a silicon neuron that incorporates membrane dynamics through an adaptation mechanism for neuromorphic compatibility. The derived modeling equations are inspired by calcium and voltage‐activated potassium conductances that allow the circuit to self‐regulate firing rates, preventing over‐excitation and enabling energy‐efficient, biologically plausible neuromorphic systems. The same is implemented in a proposed neuron circuit model that uses physical similarities between biological and silicon channels to accurately simulate action potentials and channel currents on the basis of modeling behavior. The design modulates excitatory ion currents and channel time constants, allowing the tuning of spike frequency across a wide range. The simulation results show that the neuron consumes an average power of 15.23 nW and energy efficiency 2.623 fJ/spike at a spike firing rate of 14.66 MHz, and highlight modeling to CMOS neuron implementation (45 nm GPDK, Cadence Virtuoso).

ABSTRACT Relatively few in‐depth studies on MOSFET mobility are published at cryogenic temperatures partially due to lack of appropriate extraction method associated with more complicated scattering mechanisms than at room temperature. This paper, for the first time, proposes a new Y‐function method, which is both physically and engineering novel, for mobility extraction considering the Coulomb scattering that dominates toward cryogenic temperatures. This new Y‐function method demonstrates excellent fit with measurement data taken from foundry fabricated 180 nm bulk MOSFETs for the temperature range from 300 down to 4 K.