This paper presents a high-NIR sensitivity SOI-gate lock-in pixel with improved modulation contrast. The proposed pixel has a shallow buried channel and intermediate gates to create both a high lateral electric field and a potential barrier to parasitic light sensitivity. Device simulation results showed that parasitic light sensitivity reduced from 13.7% to 0.13% compared to the previous structure.

A power-scalable sub-sampling phase-locked loop (SSPLL) is proposed for realizing dual-mode operation; high-performance mode with good phase noise and power-saving mode with moderate phase noise. It is the most efficient way to reduce power consumption by lowering the supply voltage. However, there are several issues with the low-supply millimeter-wave (mmW) SSPLL. This work discusses some techniques, such as a back-gate forward body bias (FBB) technique, in addition to employing a CMOS deeply depleted channel process (DDC).

In this research, we investigated the threshold voltage (VTH) control by partial polarization of metal-ferroelectric-semiconductor field-effect transistors (MFSFETs) with 5 nm-thick nondoped HfO2 gate insulator utilizing Kr-plasma sputtering for Pt gate electrode deposition. The remnant polarization (2Pr) of 7.2 μC/cm2 was realized by Kr-plasma sputtering for Pt gate electrode deposition. The memory window (MW) of 0.58 V was realized by the pulse amplitude and width of -5/5 V, 100 ms. Furthermore, the VTH of MFSFET was controllable by program/erase (P/E) input pulse even with the pulse width below 100 ns which may be caused by the reduction of leakage current with decreasing plasma damage.

The complexity and scale of Networks-on-Chip (NoCs) are growing as more processing elements and memory devices are implemented on chips. However, under strict power budgets, it is also critical to lower the power consumption of NoCs for the sake of energy efficiency. In this paper, we therefore present three novel input unit designs for on-chip routers attempting to shrink their power consumption while still conserving the network performance. The key idea behind our designs is to organize buffers in the input units with characteristics of the network traffic in mind; as in our observations, only a small portion of the network traffic are long packets (composed of multiple flits), which means, it is fair to implement hybrid, asymmetric and reconfigurable buffers so that they are mainly targeting at short packets (only having a single flit), hence the smaller power consumption and area overhead. Evaluations show that our hybrid, asymmetric and reconfigurable input unit designs can achieve an average reduction of energy consumption per flit by 45%, 52.3% and 56.2% under 93.6% (for hybrid designs) and 66.3% (for asymmetric and reconfigurable designs) of the original router area, respectively. Meanwhile, we only observe minor degradation in network latency (ranging from 18.4% to 1.5%, on average) with our proposals.

The transfer distance of the wireless power transfer (WPT) system with relay coil is longer, so this technology have a better practical perspective. But the location of the relay coil has a great impact on the transmission efficiency of the WPT system, and it is not easy to analyze. In order to research the influence law of the relay coil location on the transmission efficiency and obtain the optimal location, the paper firstly proposes the concept of relay coil location factor. And based on the location factor, a novel method for studying the influence of the relay coil location on the transmission efficiency is proposed. First, the mathematical model between the transmission efficiency and the location factor is built. Next, considering the transfer distance, coil radius, coil turns and load resistance, a lot of simulations are carried out to analyze the influence of the location factor on the transmission efficiency, respectively. The influence law and the optimal location factor were obtained with different parameters. Finally, a WPT system with relay coil was built for experiments. And the experiment results verify that the theoretical analysis is correct and the proposed method can simplify the analysis progress of the influence of relay coil location on the transmission efficiency. Moreover, the proposed method and the research conclusions can provide guidance for designing the multiple coils structure WPT system.

This paper presents on-chip characterization of electrostatic discharge (ESD) impacts applied on the Si-substrate backside of a flip-chip mounted integrated circuit (FC-IC) chip. An FC-IC chip has an open backside and there is a threat of reliability problems and malfunctions caused by the backside ESD. We prepared a test FC-IC chip and measured Si-substrate voltage fluctuations on its frontside by an on-chip monitor (OCM) circuit. The voltage surges as large as 200 mV were observed on the frontside when a 200-V ESD gun was irradiated through a 5 kΩ contact resistor on the backside of a 350 μm thick Si substrate. The distribution of voltage heights was experimentally measured at 20 on-chip locations among thinned Si substrates up to 40 μm, and also explained in full-system level simulation of backside ESD impacts with the equivalent models of ESD-gun operation and FC-IC chip assembly.

We have proposed and demonstrated a device fabrication process of physically defined quantum dots utilizing electron beam lithography employing a negative-tone resist toward high-density integration of silicon quantum bits (qubits). The electrical characterization at 3.8 K exhibited so-called Coulomb diamonds, which indicates successful device operation as single-electron transistors. The proposed device fabrication process will be useful due to its high compatibility with the large-scale integration process.

In this paper, we propose a hybrid crystal oscillator which achieves both quick startup and low steady-state power consumption. At startup, a large negative resistance is realized by configuring a Pierce oscillating circuit with a multi-stage inverter amplifier, resulting in high-speed startup. During steady-state oscillation, the oscillator is reconfigured as a class-C complementary Colpitts circuit for low power consumption and low phase noise. Prototype chips were fabricated in 65nm CMOS process technology. With Pierce-type configuration, the measured startup time and startup energy of the oscillator are reduced to 1/11 and 1/5, respectively, compared with the one without Pierce-type configuration. The power consumption during steady oscillation is 30 μW.