Abstract
The ZnO nanorod array (ZNA) for optoelectronic device application was prepared by hydrothermal method with Zn film as the seed layer. Large area graphene film was synthesized by chemical vapor deposition method and shows good transparency and conductivity, which is very suitable for the application of transparent conductive electrode (TCE). The graphene/ZNA/silicon device was fabricated and the photoelectrical characteristics were studied, demonstrating the feasibility of graphene used as TCE in ZNA based optoelectronic devices.
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