Abstract
An important milestone in the development of photovoltaic thin-film solar cells is the achievement of 15% conversion efficiency. This letter describes the highest efficiency single junction thin-film cell reported to date. An active area efficiency of 14.8% is obtained with the cell structure n-ZnO/n-CdS/p-CuInSe2 deposited on a soda-lime glass substrate. The current achievements are due to improved properties of the CuInSe2 layer and the heterojunctions compared to previously reported results. The rate and substrate temperature profiles used during the coevaporation process yield a relatively large-grained material with very strong 〈112〉 orientation and low porosity. This results in reduced recombination rates, hence higher open circuit voltage and fill factor.
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