Abstract
Wurtzite structured zinc sulfide (ZnS) nanowire arrays are synthesized on silicon(111) wafers by a facile evaporation–condensation approach. These ZnS nanowirearrays possess predominant field emission properties with a low turn-on field of 2.9 V µm−1, a low thresholdfield of 4.25 V µm−1, a high field-enhancement factor (over 2700), and a high stability with a low fluctuation (∼0.8%). The improved field emission performance of these ZnS nanowire arrays is attributed totheir specific crystallographic feature—array structures with nanotips and high singlecrystallinity. These results suggest that such ZnS nanowire arrays can be used as buildingblocks for field emitters.
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