Abstract
We present the magnetoconductivity measurements of a high mobility two-dimensional electron gas confined at GaN/AlGaN interface. The sensitive measurements of low field conductivity revealed both quantum corrections, the weak localization and antilocalization effects. It indicates the importance of the spin–orbit coupling in this wide band gap material. The analysis of the data provided the information about the temperature dependence of the dephasing time and total spin–orbit relaxation time. The conduction band spin splitting energy amounts to 0.23 meV and 0.35 meV at electron densities 2.2× 10 cm−2 and 5.7× 10 cm−2, respectively.
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