Abstract
The effects of oxygen and nitrogen pretreatments on interface reaction kinetics during yttrium silicate formation on silicon are described. X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS) are used to determine chemical bonding and composition of films formed by oxidation of yttrium deposited on silicon. Capacitance–voltage testing is used to determine the quality of the dielectric and the electrical thickness. The effect of ultrathin silicon oxide, nitrided oxide, and nitrided silicon interfaces on metal oxidation kinetics is also described. When yttrium is deposited on clean silicon and oxidized, XPS and MEIS indicate significant mixing of the metal and the silicon, resulting in a film with Y–O–Si bonding and composition close to yttrium orthosilicate (Y2O3⋅SiO2). A thin (∼10 Å) in situ preoxidation step is not sufficient to impede the metal/silicon reaction, whereas a nitrided silicon interface significantly reduces the silicon consumption rate, and the resulting film is close to Y2O3. The mechanisms described for yttrium are expected to occur in a variety of oxide and silicate deposition processes of interest for high-k dielectrics. Therefore, in addition to thermodynamic stability, understanding the relative rates of elementary reaction steps in film formation is critical to control composition and structure at the dielectric/Si interface.
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