X-ray, reflection high electron energy diffraction and X-ray photoelectron spectroscopy studies of InSe and γ-In 2Se 3 thin films grown by molecular beam deposition

Abstract

In x Se y thin films have been grown on amorphous substrates by molecular beam deposition of indium and selenium under ultra high vacuum. The growth conditions of InSe and γ-In 2Se 3 thin films have been investigated by X-ray diffraction, reflection high energy electron diffraction and X-ray photoelectron spectroscopy measurements. A phase diagram of In x Se y thin films has been determined as a function of substrate temperature and equivalent partial pressure ration R = P Se/ P In. A two-dimensional growth mode of InSe thin films is observed by reflection high energy electron diffraction investigations for 225 °C< T s<350 °C. The selenium incorporation is discussed as a function of substrate temperature and equivalent partial pressure ratio R.