Abstract
AbstractWe have measured the principal strain state of AI-0.5%Cu lines passivated with silicon nitride directly and used it to calculate the stress state. The stress was determined as the lines were thermally cycled from room temperature to 450°C. The general stress-temperature behavior shows good fundamental agreement with that calculated using finite-element methods, although the magnitude of the stresses measured with x-rays is less than that predicted by modeling due to stressinduced voiding in the lines. This is shown with a high voltage scanning transmission electron microscope (STEM) operated in the backscattering mode.
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