Abstract
XPS measurements of Pd-Si and Pd-SiO 2-Si samples with and without irradiation with visible light were carried out at temperatures of 80 and 300 K. The deposition of the metal on the SiO 2-Si surface changes the Si band-bending. Use of Si2p core levels as an internal standard can lead to shifted values of the binding energies of the deposited metal and thus to incorrect interpretations. The maximum Pd3d 5/2 core-level shifts found at 80 K and caused by irradiation were 0.19 and 0.26 eV for Pd-Si and Pd-SiO 2-Si respectively, and were reproducible within ±0.05 eV. Upon irradiation, the elemental Si el2p core-level shifts were 0.19 eV for both systems while the shifts of the oxide Si ox2p line were equal to those of Pd3d 5/2, i.e. 0.26 eV. Static charging was observed on SiO 2-Si substrates for SiO 2 thicknesses as low as 1.7 nm. Oxygen adsorption on the Pd-SiO 2-Si surface changes Si band-bending and increases both the sample photovoltage and the surface static charging.
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