Abstract
Amorphous FeZr was dusted in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs), and the effects on tunnel phenomena were investigated. As the thickness of the FeZr layer between the CoFeB and the MgO layers increased, the resistance increased rapidly and the bias dependence became asymmetric while the tunneling magneto-resistance (TMR) decreased. The interface was investigated by using X-ray photoemission spectroscopy, and the change in the transport property due to dusting was explained.
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