Abstract
Pt-Si thin films with the thickness of several hundred A prepared on n-type Si(100) by UHV sputter-deposition procedures and subsequent annealing have been studied with X-ray absorption fine structure spectroscopy at the Pt M 3,2 edge and the Si K-edge. It is found that. under favourable conditions. single phase PtSi films can be obtained. These films exhibit the same XAFS characteristics as those of bulk samples. The M 3,2 edge exhibits XANES features very similarto those of the Pt L, 3.2 edge obtained front the samples. The analysis of the Pt M 3.2 edge whiteline and the Si K-edge results show significant charge redistribution at both Pt and Si sites upon silicidation.
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