Abstract
The radiation damage and reliability of bipolar transistors have been studied using the vacuum ultraviolet storage ring of the National Synchrotron Light Source at the Brookhaven National Laboratory. The bipolar devices under study were exposed to x-ray radiation in the range of 1–2 keV. The device parameters were measured before and after irradiation, and were measured again after the devices were annealed. Finally, the devices underwent a reliability test. The study shows that x-ray radiation degrades the common emitter current gain. Upon annealing, the current gain recovers its initial value. Furthermore, the current gain exhibits the same degree of reliability as observed on nonirradiated devices.
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