Abstract
AbstractThe influence of boron diffusion on the X‐ray Moiré pattern is investigated by means of X‐ray interferometry. It is shown that at low boron concentrations in silicon, the Moiré patterns indicate the non‐dislocative character of arising stresses. At higher concentrations the dislocations arise. Basing on the obtained topogram, the maximum local stress is evaluated, which at boron concentration of 2.5 · 1019 at/cm3 is 1.05 · 108 N/m2.
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