X-ray diffraction investigation into the specific features of the growth kinetics of oxygen-containing precipitates in Czochralski-grown silicon crystals

Abstract

The formation and growth of defects (precipitates and dislocation loops) during isothermal decomposition of a supersaturated oxygen-containing solid solution in Czochralski-grown silicon crystals are investigated using triple-crystal x-ray diffractometry. It is established that oxygen-containing precipitates grow through diffusion and that the formation of dislocation loops is associated with both the coagulation of embedded silicon atoms and the generation of dislocation loops by stresses induced in the vicinity of the oxygen-containing precipitates.