Abstract
Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
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