Abstract
Bandgap tunable β-(Al, Ga)2O3 mixed crystals with different Al concentration were grown by the optical floating zone (OFZ) method. When the nominal Al doping concentration was close to 0.26, cracking appeared. The powder X-ray diffraction (XRD) revealed that β-(Al, Ga)2O3 mixed crystals kept the crystal structure of β-Ga2O3 without foreign phases and the lattice parameters decreased with the increasing Al concentration. Al magic angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy showed that Al occupied Ga positions and the ratio of Al(IV)/ Al(VI) was about 1:3.The transmittance spectra were measured to investigate the bandgap of β-(Al, Ga)2O3 mixed crystals. Results showed that the bandgap increased continuously with the Al concentration increasing from 4.72 eV to 5.32 eV, which may extend the application of β-Ga2O3 crystal in optoelectronic devices operating at shorter wavelength.
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