Abstract
An advantage for some wide bandgap materials that is often overlooked is that the thermal coefficient of expansion (CTE) is better matched to the ceramics in use for electronic-packaging technology. The optimal choice for unipolar devices is GaN and the associated material system of GaN/AlGaN. The future optimal choice for bipolar devices at all power levels is C (diamond). New expressions, ɛ c=1.73×105 (EG)2.5 for direct-gap and ɛ c=2.38×105 (EG)2 for indirect-gap semiconductors, relating the critical-electric field for breakdown in abrupt junctions to the material bandgap energy, and associated new expressions for specific on-resistance in power semiconductor devices is shown to further support the use of wide bandgap materials. Some low-voltage, power-electronics applications are shown to benefit by the use of Ge, C, and GaSb.
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