Abstract
We describe the history of New Japan Radio Co. Ltd., (NJR) and our continuing presence in the business of manufacturing gallium arsenide radio frequency (GaAs RF) front-end devices. We also explain how our company survived and prospered despite the changing markets. We compare NJR strategies with those of competing RF integrated circuit (RFIC) manufacturers in Japan and briefly describe the hetero-junction field-effect transistor technology, which plays a key role in the success of NJR's RFIC business. We present some of the manufacturing and performance data to show how we improved the wafer process. These unique underlying technologies have enabled the implementation of unique circuit types, which are rarely seen in conventional GaAs ICs.
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