Abstract
A white-light emitting electroluminescent (EL) device with newly developed ZnS:Pr, Ce, F phosphor layer was fabricated inside a micromachined well having four-sided Si mirrors, prepared by anisotropic wet etching of Si (100) wafer. Highly luminant EL was achieved using the Si micromirrors. Furthermore, the EL device utilizing the metallized mirrors incorporated into the glass substrates also exhibited enhanced brightness when compared to the conventional face-emitting EL device.
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