Abstract
Photoenhanced wet etching of GaN in a peroxydisulfate aqueous solution has been used in npn HBT device fabrication. The wet etch acts as a selective etch for n-type layers, where the p-type layer acts as an etch stop. This allows the use of thinner base layers in an npn structure. No counter electrode or electrical connection to the wafer is required with the approach. We present experimental results on the fabrication of BJTs and HBTs using this self-aligned wet etching. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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