Abstract
We studied and evaluated a new two-component resist which consists of poly(methyl methacrylate) (PMMA) and an aromatic bisazide compound (3, 3′-diazidodiphenyl sulfone). This polymer combination acts as a negative working deep UV resist. The resist was successfully applied to contact printings and a one-to-one ratio of toluene and xylene used as the developer gave the best lithographic results in the wet development process. The image was reversed by doping the PMMA with the bisazide photosensitizer and the sensitivity of this new resist was enhanced by a factor of 40 relative to normally used positive tone PMMA. Features down to 0.5μm are clearly observed in this negative resist system. This resist was found to be dry developable using a post-exposure heat treatment followed by oxygen plasma development. The sensitivity of this PMMA-bisazide resist depends on the bisazide concentration in PMMA solution and the optimum concentration (25wt% bisazide) was studied in detail.
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