Abstract
ABSTRACT The surface sol-gel (SSG), a solution-based and stepwise film growth technique, was developed to produce ultrathin zirconium oxide (ZrO2) films for high-k gate dielectric application. X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) measurements confirm the successful deposition of ultrathin polycrystalline ZrO2 films on Si substrate by the SSG method. Electrical measurements show that a large effective oxide thickness (EOT) of 2.4 nm with high leakage current was obtained, and a hysteresis in C-V curves and large fix charge density in ZrO2 films was observed, which related to the formation of substoichiometric silicon oxide in the interface. Surface nitridation of Si substrate by NH3 plasma can effectively reduce the leakage current and fixed or trapping charge density, as well as improve the interface properties. EOT of 2.21 nm with JA = 30.4 mA/cm2 at Vg = +1 V was demonstrated in ZrO2 films with a Si nitride barrier layer.
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