Abstract
We present an engineered wedge-shaped electron blocking layer to tackle the issue of hole injection and transport into the active region. Poor hole injection and transport are one of the major reasons behind the poor performance of the light-emitting diodes. The simulation results show that a noticeable improvement in injection of holes is observed when modified electron blocking layer is used in the device and, thus, the optoelectronic properties of the device are also enhanced considerably.
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