Weak localization effects in Ga-intercalated layered compound NbS 2

Abstract

Ga x NbS 2( x = 0 − 0.33) was prepared in two batches-≈ 1000°C (LT) and ≈ 1125°C (HT). X-ray diffraction shows random stacking of 2H-NbS 2 layers in the HT phase. Resistivity and thermopower measurements from 15 to 300 K show metallic behaviour and anomalies aroung 45 K. The disordered phases indicate weak localisation effects in conductivity above 45 K and a log T variation in the x = 0.25 compound indicating 2-D conduction. The thermopower is unaffected by the disorder. The 45 K transition suppresses this localisation.