Abstract
Electrical and magnetotransport properties of polycrystalline tin dioxide films were investigated in the temperature range 2-300 K and in high magnetic fields up to 27 T. The experimental data were analyzed using models inherent both for 2D and 3D disordered systems. A crossover from 2D to 3D behaviour was observed as the temperature was increased.
Highlights
Besides a number of perspective applications in optoelectronics due to the coexistence of high optical transparency in visible and infrared range of electromagnetic waves’ spectra and high electrical conductivity [1], tin dioxide films provide the possibility to study different charge transport mechanisms, such as hopping, tunneling, diffusion transport
Temperature dependence Typical R(T) dependence for SnO2 film is presented in figure 2
Where first term is a constant related to the residual conductivity of the system at T=0 K, the second and the third term are the temperature dependence of conductivity due to effects weak localization (WL) and electron interactions (EEI), respectively
Summary
Besides a number of perspective applications in optoelectronics due to the coexistence of high optical transparency in visible and infrared range of electromagnetic waves’ spectra and high electrical conductivity [1], tin dioxide films provide the possibility to study different charge transport mechanisms, such as hopping, tunneling, diffusion transport. Such types of R(T) dependencies (with negative temperature coefficient of the resistance (dR/dT
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