Abstract
Abstract This study experimentally investigated La-doped ZrO2 (ZLO) antiferroelectric (AFE) capacitors. Significant polarization enhancement is demonstrated in ZLO antiferroelectric capacitors with the optimized La concentration. The ZLO antiferroelectric capacitors reveal superior performance even under a low-temperature process (< 400℃). Remarkably, without the post-metallization annealing (PMA), ZLO devices still possess excellent antiferroelectric properties, which is highly advantageous for back-end-of-line (BEOL) process. Further endurance testing shows that ZLO antiferroelectric devices could withstand the wake-up effect during cycling process, showcasing unexceptionable endurance (>1010 cycles). The results in this study opens new avenues for practical antiferroelectric applications and brings promise for their integration into advanced integrated circuits.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
