Abstract
The letter develops a wafer-level testing method to examine Young’s modulus and residual stress of structural material of capacitive microdevice by measuring the pre-pull-in capacitance variation of the microtest beam made of the material to be tested. The required instrument is only a precision LCR meter. The extracted Young’s moduli and residual stresses of demonstrated samples agree very well with the experimental measurement. The present method is expected to be applicable to the wafer-level testing in microdevice manufacture and compatible with the wafer-level testing in integrated circuit industry, since the test and pickup signals are both electrical.
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