Abstract
Halide perovskite and silicon heterojunction solar cells present sensitive contact layers prone to damage during ITO deposition. We study the effect of ITO pulsed laser deposition pressure on damage mitigation and improved solar cell performance.
Highlights
46980 Paterna, Spain † Electronic supplementary information (ESI) available
We demonstrated ITO films at various deposition pressures with good optoelectrical properties by wafer-scale pulsed laser deposition (PLD) at room temperature
PLD ITO fabricated at elevated pressures leads to the improvement in fill factor (FF) and Voc for the semi-transparent perovskite solar cells suggesting the reduced damage at the transport layer/Transparent conducting oxides (TCOs) interface
Summary
There are successful strategies to mitigate the negative effects of TCO fabrication (mainly, thicker protective thin films and annealing/curing steps), the development of alternative softlanding deposition methods is highly desirable In this regard, pulsed laser deposition (PLD) has been demonstrated as a promising approach enabling low-damage deposition on top of. At optimized PLD ITO conditions, combining high pressure during deposition and high free carrier density (Ne) on the film level, leads to efficient proof-of-concept SHJ solar cells.
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