Abstract
This paper proposes a voltage-based hot-spot detection method for photovoltaic (PV) string using the projector. Hot-spots form in solar cells at defects causing a high carrier recombination rate, it appears as a high reverse leakage current of p-n junctions when solar cells are partially shadowed. Using this characteristic, authors previously developed a voltage-based hot-spot detection method to quickly identify and characterize the severity of a module hot-spot. However, previous experimental results were shown for just one module. In this paper, experiments are done on plural modules in the string. From the result, this method works effectively for PV string. Correlations among illuminance, load resistance, hot-spot temperature, and risk factor are also discussed.
Highlights
Introduced in July 2012, Japan’s feed-in tariff (FIT) policy was famously generous and triggered a surge in solar investment in the country
Before presenting the details of the present study, it will be useful to review the general characteristics of p-n junctions, and, under reverse bias, can act as sites for premature avalanche or background associated with cell hot-spot heating
The risk factor Hot-Spot Index (HSI) of the based hot-spot detection method is defined as Equation (5): voltage-based hot-spot detection method is defined as Equation (5):
Summary
Introduced in July 2012, Japan’s feed-in tariff (FIT) policy was famously generous and triggered a surge in solar investment in the country. Hot-spot heating occurs when, due to some anomaly, such as shadows on cells, the reduced short-circuit current of affected cells becomes lower than the operating current of the module This will force affected cells into a reverse bias condition, acting as an internal load, dissipating the power generated by other cells in the form of heat [2]. Before presenting the details of the present study, it will be useful to review the general characteristics of p-n junctions, and, under reverse bias, can act as sites for premature avalanche or background associated with cell hot-spot heating. The resulting non-uniform current densities of p-n junctions, and, under reverse bias, can act as sites for premature avalanche or Zener produce hot-spots [3].
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