Abstract
The defect structure in epitaxial silicon films grown by solid phase epitaxy (SPE) and by molecular beam epitaxy (MBE) has been studied by probing with implanted helium. It was found that SPE layers contain large vacancy clusters (voids) at a low density. In both SPE and MBE films, other not yet fully identified but smaller defects which trapped helium were detected. The detection of voids is in agreement with results of cross-sectional transmission electron microscopy observations of the SPE film. Defect concentrations found in the SPE and MBE films are similar to earlier results obtained with positron beam analysis on these layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
