Abstract
The energy levels of electron traps (namely, defect complexes associated with oxygen vacancies) in Gd3Al2Ga3O12:Ce (GAGG:Ce) were studied at 12 K using mid-infrared (MIR) light pulses from a free-electron laser (FEL) as the probe light. Ce3+ 5d–4f luminescence was stimulated by the MIR light pulse following an ultraviolet light pulse. Stimulation of Ce3+ 5d–4f luminescence by MIR light pulses was pronounced above 0.31 eV. This result is consistent with that of previous work based on a trap-mediated luminescence model. It is concluded that the electron trap levels are located 0.31 eV below the bottom of the conduction band. This study demonstrates that MIR-FEL is applicable for the determination of hidden electron trap levels.
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