Abstract
The TFT device is directly exposed by light from backside light source and outside light source beyond the display screen. Therefore, if the impact of extra light intensity possibly produces the instable operation of this device with continuous-wave (cw) laser crystallization (CLC) poly-Si channel, these device characteristics should be examined. For CLC poly-Si n-TFT device, it was fabricated successfully by C. Chen's team (1). This TFT device demonstrates excellent electron mobility, up to 530 cm2/V-s, is greater than that with low-temperature poly-silicon (LTPS) fabrication technology. In this study, the species of the tested light sources with light emitting diodes (LEDs) contained green and blue wavelengths. From the experimental data, we observed while the TFT glass substrate was exposed by a specified LED, some current-voltage (I-V) characteristic curve of this TFT device was slightly shifted or demonstrated a wavelet phenomenon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
