Abstract
Visible (682 nm) InAlGaAs oxide stripe lasers have been fabricated on atmospheric pressure MOVPE grown material. Lowering the oxygen residue of the metal organic reagents allows uniform deposition of high optical quality InAlGaAs QWs at ~600°C. A separate confinement heterostructure laser using a single QW lased at room temperature with J∞ of 1.23 kAcm-2.
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