Abstract
Electroluminescence (EL) studies of AlN:Er alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. Thin films of Er-doped AlN, ∼200 nm thick, were grown on indium–tin–oxide/aluminum–titanium–oxide/glass substrates using rf magnetron sputtering in a nitrogen atmosphere. The turn-on voltage was found to be around 70–80 and 100 V for ACTFEL devices without and with a top insulator layer. Sharp emission lines in the visible region were observed which correspond to known transitions of the Er3+ ion. Temperature-dependent cathodoluminescence studies corroborate the EL results, and show that optimum device performance is attained near 300 K.
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