Abstract
A n+-indium–tin-oxide (ITO)/Sm-doped i-TiO2/p-NiO/p+-Si light-emitting diode (LED) was fabricated via laser ablation and post annealing treatment. The LED emitted red light at room temperature under a relatively low threshold voltage of 12 V. The electroluminescence and photoluminescence spectra of the LED were compared, and a stable and single-type Sm3+ luminescent center was observed to give rise to red emission under different excitation conditions. These results suggest that there is a strong possibility of realizing LEDs based on rare-earth-doped metal oxide semiconductors.
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