Abstract
Erbium doped β-Ga2O3 nanowires and microwires have been obtained by a vapour–solid process from an initial mixture ofGa2O3 and Er2O3 powders. X-ray diffraction (XRD) analysis reveals the presence of erbium gallium garnet as well asβ-Ga2O3 phases in the microwires. Scanning electron microscopy (SEM) images show that the largermicrowires have a nearly rectangular cross-section. Transmission electron microscopy(TEM) and high-resolution TEM (HRTEM) analysis show good crystal quality of theβ-Ga2O3 nanowires. The nanostructures have been studied by means of the cathodoluminescencetechnique in the scanning electron microscope. Er intraionic blue, green and red emissionlines are observed in luminescence spectra even at room temperature, which confirms theoptical activity of the rare earth ions in the grown structures. Mapping of the main555 nm emission intensity shows a non-homogeneous distribution of Er ions in themicrostructures.
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