Abstract
It is theoretically shown that an extremely low saturation intensity (< 0.05 mW/µm2) as well as an ultrafast (~1.3 ps) response are possible in 1.5 µm intersubband absorption in n-doped InGaAs/AlAsSb multiple quantum wells with electron concentration of ~1 × 1019 cm-3. Such a low saturation intensity is ascribed to the δ-function-like absorption spectra of the intersubband transition and a reduced dephasing rate achieved by high doping.
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