Abstract
A very-low-profile hybrid antenna for the LTE smartphone was presented. The antenna structure was mainly formed by a T-shaped open slot disposed on the main circuit board inside the smartphone casing and a metallic patch printed on the inner surface of the frame around the smartphone casing. The antenna with the T-shape open slot and the on-frame metallic patch had a very low profile of 3 mm. By using two feeds (low-band and high-band feeds) across the two arms of the T-shape open slot and connected to the on-frame metallic patch, hybrid resonant modes including the open-slot antenna (OSA) mode, the closed-slot antenna (CSA) mode, and the inverted-F antenna (IFA) mode could be generated to form two operating bands for the LTE operation. The low band could cover the 824–960 MHz band for the LTE band 5 and 8 operation. The high band can cover the 1710–2690 MHz band for the LTE band 10, 15, and 16 operation. The techniques on exciting the hybrid resonant modes with good impedance matching for the proposed very-low-profile antenna were addressed in this study. Experimental data of the fabricated antenna were also presented to verify the simulation results. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1572–1577, 2016
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
