Abstract
A new switched-current memory cell is proposed which achieves very low charge injection errors. The technique virtually eliminates the signal-dependent error, leaving only an offset which is cancelled using either dummy switches or a fully differential configuration. The improved memory cell was designed using a standard 3.3 V, 0.8 /spl mu/m CMOS digital process. Simulation results demonstrate that the signal-dependent charge injection error is lowered by as much as two orders of magnitude.
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