Very high thermal stability with excellent dielectric, and non-ohmics properties of Mg-doped CaCu3Ti4.2O12 ceramics

Abstract

In this work, the nominal CaCu3−xMgxTi4.2O12 (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ) < 0.009–0.014 and giant dielectric constant (e′) ∼ 1.1 × 104–1.8 × 104 with excellent temperature coefficient (Δe′) less than ± 15% in a temperature range of − 60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg2+ dopants due to the increase of grain boundary resistance (Rgb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg2+ dopants in the structure. In addition, CaCu3−xMgxTi4.2O12 ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (Eb) due to Mg2+doping. The high values of e′ (14012), α (13.64) and Eb (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu2.90Mg0.10Ti4.2O12 ceramic sintered at 1100 °C for 8 h.