Abstract
This paper describes the unique antireflection (AR) layer of vertically arranged ZnO nanorods (NRs) on crystalline silicon (c-Si) solar cells and studies the charge transport and photovoltaic properties by simulation. The vertically arranged ZnO NRs were deposited on ZnO-seeded c-Si wafers by a simple low-temperature solution process. The lengths of the ZnO NRs were optimized by changing the reaction times. Highly dense and vertically arranged ZnO NRs were obtained over the c-Si wafer when the reaction time was 5 h. The deposited ZnO NRs on the c-Si wafers exhibited the lowest reflectance of ~7.5% at 838 nm, having a reasonable average reflectance of ~9.5% in the whole wavelength range (400–1000 nm). Using PC1D software, the charge transport and photovoltaic properties of c-Si solar cells were explored by considering the lengths of the ZnO NRs and the reflectance values. The 1.1 μm length of the ZnO NRs and a minimum average reflectance of 9.5% appeared to be the optimum values for achieving the highest power conversion efficiency of 14.88%. The simulation study for the vertically arranged ZnO NRs AR layers clearly reflects that the low-temperature deposited ZnO NRs on c-Si solar cells could pose a greater prospect in the manufacturing of low-cost c-Si solar cells.
Highlights
Recent research in Si solar cell technology is basically focused on reducing the manufacturing cost by means of using low-cost and effective raw materials [1]
The top view of the Zinc oxide (ZnO) NRs grown at 5 h reveals that the NRs are well grown in many directions, as they are clearly visible in the cross-sectional view
ZnO NRs exhibited a minimum reflectance of ~7.5% at 838 nm, with a ~9.5% average reflectance in the wavelength range from 400–1000 nm
Summary
Recent research in Si solar cell technology is basically focused on reducing the manufacturing cost by means of using low-cost and effective raw materials [1]. A coating of a thin layer, called the antireflection (AR) layer, on Si surfaces is applied for reducing the incident reflection and to increase light absorption. In commercial c-Si solar cells, a silicon nitride (SiNx) layer is generally used as an AR material because it shows good attachment with passivated Si surfaces [2]. The expensive Plasma Enhanced Chemical Vapor Deposition (PECVD) method has been applied to deposit SiNx AR layers. The PECVD process is usually faced with several disadvantages, such as controlling and damaging the Si substrate with plasma during the collision of the Si surface and secondary electrons [3,4]. Various AR materials having high refractive indexes, such as Si3 N4 , a-SiNx , SiO, SiO2 , TiO2 , Ta2 O5 , MgF2 , SiO2 –TiO2 , and ZnS, have
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
