Vertical structure p-type permeable metal-base organic transistors based on N,N′-diphentyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine

Abstract

In this article, vertical structure p-type permeable-base organic transistors were proposed and demonstrated. A hole-type organic semiconductor N,N′-diphentyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine was used as emitter and collector. In the permeable-base transistors, the metal base was formed by firstly coevaporating Al and Ca in vacuum and then annealing at 120°C for 5min in air, followed by a thin Al deposition. These devices show a common-base current gain of near 1.0 and a common-emitter current gain of ∼270.