Abstract
We presented and demonstrated a new type of vertical nanowire (NW) and nanosheet (NS) field-effect transistors (FETs), named vertical sandwich gate-all-around FETs or VSAFETs, which were formed with the process compatible in the main stream industry. The VSAFETs with self-aligned high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> metal gates (HKMGs) were fabricated with epitaxy of Si/SiGe/Si sandwich structure, an isotropic quasi-atomic-layer-etch (qALE) process, and gate replacement process. The gate-length of VSAFETs is mainly determined by the thickness of SiGe film grown by epitaxy. The NW diameter and NS thickness could be obtained by the isotropic qALE method, which can be used to the Si-selective etching of SiGe. As a result, p-type NS and NW VSAFETs with good device characteristics were fabricated. Device performance and the influence of silicide, Ge fraction, Si cap, and high thermal process were investigated; threshold voltage tuning and reliability were also discussed.
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