Abstract
We report a vertically diffused finFET with high-κ gate dielectric and metal gate for potential power applications. Electron beam lithography and deep silicon reactive ion etching (RIE) were utilized to form the fins, followed by atomic layer deposition of Al2O3 high-k dielectric and TiN to form the metal gate. Self-aligned silicide (salicide) was formed on the top of the fins to lower the contact resistance. The devices exhibit excellent performance with steep sub-threshold swing (SS), low drain-induced barrier lowering (DIBL) and a high ION/IOFF ratio. The breakdown voltage test (BVDSS) was also characterized for potential power applications.
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