Abstract
AbstractIn order to improve GaN‐based light‐emitting diode (LED) performance, a sapphire‐etched vertical‐electrode nitride semiconductor (SEVENS) LED is fabricated by a chemical wet etching technique. The light‐output power, heat dissipation, and reverse electrostatic discharge (ESD) characteristics of SEVENS‐LED are improved compared to those of the conventional NiAu lateral‐electrode (LE) GaN‐based LED formed on the sapphire substrate. The 20 mA light‐output power and reverse ESD pulse amplitude of SEVENS‐LED are approximately 4.5 mW and 2000 V, respectively. The improved LED performance is attributed to changing a lateral electrode to a vertical electrode although the sapphire substrate is not transferred to a conducting substrate. The device fabrication method will be useful for providing us high‐brightness and high‐power GaN‐based LEDs for future solid‐state general lighting applications. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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