Abstract
The contribution of the second-order self-energy to the band-gap reduction due to exchange and correlation effects is evaluated by including the valence-band mixing for a quasi-two-dimensional electron–hole plasma. Based on the screened, effective interaction within the random-phase approximation, the change of valence band structure due to band mixing has been discussed by using the Luttinger-Kohn Hamiltonian as a function of the compressive strain. The present results applied to the InxGa1−xAs/InGaAsP quantum well systems lattice-matched to InP exhibit that the vertex correction due to second-order self-energy is enhanced with increasing compressive strain and sheet carrier density, and in addition, with decreasing carrier density, it is significantly contributive to the band-gap reduction due to exchange and correlation effects.
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