Abstract
It was experimentally found that electronic structures of Russell-Saunders manifolds in Nd:YAG depended on the Nd3+-doping concentration (CNd) and its fabrication process. Both of the bandwidth and the branching ratio in fluorescent transitions in Nd:YAG varied almost linearly depending on CNd, and a fabrication process has its own diluted limit of the bandwidth and the branching ratio. Also dependences of Stark splitting in Nd:YAG were also observed. Nd3+-doping causes 1.9% and 4.5% reduction in the stimulated emission cross section of Nd:YAG per 1at.% of CNd at 1.064 μm and 1.319 μm, respectively.
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