Abstract
In this study, we synthesized Mo0.9W0.1Te2 nanobelts on the SiO2/Si substrates without using catalyst by a facile chemical vapour deposition method. Through detailed structural and compositional characterizations, we found that Mo0.9W0.1Te2 nanobelts have a thickness of ∼50 nm with a width-to-thickness ratio of 3–5 and a length up to tens of μm. Besides, the grown nanobelts have a monoclinic structure with a growth direction of [010] and the {001} belt surface. Moreover, a vapour-solid growth mechanism is proposed to explain the growth of Mo0.9W0.1Te2 nanobelts. This study demonstrated a simple synthesis method for the growth of single crystalline MoxW1-xTe2 nanomaterials, which is significant for the development of MoxW1-xTe2-based electronic and spintronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
